کنفرانس مهندسی برق ایران

صفحه اصلی / سی و دومین کنفرانس بین المللی مهندسی برق

Defects Dynamics in Multilayer h-BN Resistive Switching Memories: A Molecular Dynamics Investigation

نویسندگان :

Omid Babaeinejad¹ Maryam Keshavarz Afshar² Ebrahim Nadimi³

1- دانشگاه صنعتی خواجه نصیرالدین طوسی 2- دانشگاه صنعتی خواجه نصیرالدین طوسی 3- دانشگاه صنعتی خواجه نصیرالدین طوسی

کلمات کلیدی :

Hexagonal Boron Nitride (h-BN)،neuromorphic devices،resistive switching،boron vacancy،memristor،nitrogen vacancy،Stone Wales defect،molecular dynamic

چکیده :

Two-dimensional hexagonal boron nitride (h-BN) features a hexagonal lattice structure and special electrical and thermal properties that make it attractive for a variety of applications, including resistive switching memory and neuromorphic computing. Although numerous experimental and theoretical studies have been carried out in this area, it is still unclear how exactly the layers are switched on and off. In this study we investigate the dynamics of defects in a multilayer h-BN, which is sandwiched between two Ni electrodes. The effects of different electric fields were studied using the Reax force field (Reaxff) and molecular dynamics simulation. It has been discovered that certain defects, such as Stone-Wales defects (SW) and multiple vacancies arising from nitrogen vacancies (VN) and boron vacancies (VB), play an important role in the formation of conductive filaments and bridges between layers. These bridges have a significant impact on the electrical and switching properties of multilayer h-BN.