کنفرانس مهندسی برق ایران

صفحه اصلی / سی امین کنفرانس بین المللی مهندسی برق

A High Responsivity Plasmonic Internal Photoemission detector for Optical Communication

نویسندگان :

Faramarz Alihosseini¹ Aref Rasoulzadeh Zali² Tavakol Pakizeh³ Hesam Zandi⁴

1- دانشگاه صنعتی خواجه نصیرالدین طوسی 2- Eindhoven University of Technology 3- دانشگاه صنعتی خواجه نصیرالدین طوسی 4- دانشگاه صنعتی خواجه نصیرالدین طوسی

کلمات کلیدی :

photodetector،surface plasmon،internal photoemission،responsivity

چکیده :

In this paper a novel Silicon Schottky photodetector enhanced by localized surface plasmon excitation for C-band communication was designed and numerically investigated. The photodetection mechanism is based on the internal photoemission of the hot electrons in the 2 nm-thick of Schottky metal consisting of a two-dimensional square array of holes. The polarization-insensitive absorptance in this photodetector with Au Schottky metal dramatically enhances to 95.1% at the wavelength of 1.55 µm. Moreover, at a reverse bias voltage of 1 V, we achieve a high responsivity of 0.32 A/W and the dark current of 665 nA at room temperature

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