کنفرانس مهندسی برق ایران

صفحه اصلی / سی و چهارمین کنفرانس بین المللی مهندسی برق

A Low-Temperature-Coefficient Sub-1V BGR Using Dual-PTAT Subtraction

نویسندگان :

Mohammad Rashtian¹ Mahdi Shahpasandi² Seyed Parsa Mirasadi³ Sajjad Shojaei Baghini⁴

1- دانشکده صنعت هواپیمایی کشوری 2- دانشگاه تهران 3- دانشگاه تهران 4- دانشگاه تهران

کلمات کلیدی :

Bandgap voltage reference،BGR،Low temperature coefficient،PTAT/CTAT compensation،Trimming

چکیده :

This work presents a low–temperature-coefficient (TC), sub-1 V bandgap voltage reference (BGR) based on the subtraction of two proportional-to-absolute-temperature (PTAT) currents, both generated using ΔVBE. The first PTAT current follows a conventional topology, while the second is inspired by the Banba BGR concept but is modified such that its dominant temperature dependence remains PTAT. In effect, the Banba-like technique is employed only to reduce the PTAT slope, rather than to achieve full temperature compensation as in the original Banba approach. By largely avoiding the nonlinear complementary to absolute temperature (CTAT) contribution of VBE and using it only marginally for slope adjustment, both proportional-to-absolute-temperature (PTAT) components exhibit improved linearity compared to conventional BGRs, resulting in a significantly lower TC. Simulation results demonstrate a reference voltage of approximately 489.6mV. The proposed BGR achieves a TC of 5 ppm/°C at VDD =1.2V, operates from a minimum supply voltage of 1V, consumes 7.93 µW. A 5-bit, binary-weighted on-chip trimming resistor is included to compensate process variations across corners. Transient simulations indicate a settling time of about 75ms, while the best-case DC power-supply ripple rejection reaches −97.8 dB, with a line sensitivity of 0.044 %/V over a VDD range of 1–1.8V.