کنفرانس مهندسی برق ایران

صفحه اصلی / بیست و نهمین کنفرانس مهندسی برق ایران

Low-Power Subthreshold Level Shifter in 180 nm Process

نویسندگان :

Zahra Ghasemzadeh¹ Mehdi Saberi²

1- دانشگاه فردوسی مشهد 2- دانشگاه فردوسی مشهد

کلمات کلیدی :

Subthreshold region, voltage level converter, power dissipation

چکیده :

This brief presents a power-efficient voltage level shifter architecture that can operate in the sub-threshold region. To avoid static power dissipation, the proposed structure exploits an auxiliary circuit to charge internal nodes up to VDDH. Moreover, the strength of the pull-down device is increased with the aid of a second auxiliary circuit. Post-layout simulation results of the proposed structure in a 0.18-μm CMOS technology show that at the input low supply voltage of 0.3 V and the high supply voltage of 1.8 V, the level shifter has a propagation delay of 46 ns, static power dissipation of 230 pW, and an energy per transition of 84 fJ for a 1-MHz input signal.

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