کنفرانس مهندسی برق ایران

صفحه اصلی / سی و چهارمین کنفرانس بین المللی مهندسی برق

Performance Enhancement of Multiple-Quantum-Well Transistor Vertical-Cavity Surface-Emitting Lasers via Graded-Index Confinement Engineering

نویسندگان :

Farnaz Dana¹ Hassan Kaatuzian²

1- Amirkabir University of Technology 2- Amirkabir University of Technology

کلمات کلیدی :

Transistor Laser،T-VCSEL،semiconductor lasers،graded index،separate confinement hetero structure،GRIN-SCH،Quantum-well

چکیده :

This paper studies the optoelectronic performance of a 980-nm transistor vertical-cavity surface-emitting laser with multiple quantum wells in the base region, focusing on gradedindex separate confinement heterostructures. A reported triplequantum- well device with a uniform base is used as the baseline and validated through comparison with experimental current– voltage and optical power data. Several graded-index base designs are then analyzed and compared. The funnel-shaped structure increases the optical output power from 1.9 mW to about 2.5 mW at IB = 10 mA and VCE = 3 V, while cascade designs enhance the cutoff frequency from 21.9 GHz to approximately 25.6 GHz. These improvements arise from enhanced carrier confinement and reduced transport time, demonstrating the effectiveness of graded-index engineering for optimizing T-VCSEL performance.