0% Complete
صفحه اصلی
/
سی و سومین کنفرانس بین المللی مهندسی برق
Investigation of Impact Ionization Variations Versus Electric Field and Temperature in Compound Semiconductors for UV-APD Applications
نویسندگان :
Mohammad hossein Khoddami
1
Hassan Kaatuzian
2
Mohammad hossein Asgari
3
1- دانشگاه صنعتی امیرکبیر(پلی تکنیک تهران)
2- دانشگاه صنعتی امیرکبیر(پلی تکنیک تهران)
3- دانشگاه صنعتی امیرکبیر(پلی تکنیک تهران)
کلمات کلیدی :
Impact Ionization Coefficients،Okuto-Crowell model،UltraViolet،GaN،Temperature Dependence
چکیده :
This paper investigates the impact ionization coefficients for two types of carriers, electrons and holes, using the Okuto-Crowell model and related equations. We examine how these coefficients depend on electric field and temperature in various sample materials, specifically GaN, AlGaN, 4H-SiC, and Ga2O3, which are suitable for ultraviolet Avalanche Photodiode (APD) applications. This makes them highly suitable for creating ultraviolet photodetectors since they have a high band gap that puts them in the ultraviolet light absorption range. As a result, expensive gratings and filters customarily necessary for high-sensitivity detectors to ultraviolet radiation are not required. A typical architecture for ultraviolet detectors is the Separate Absorption and Multiplication (SAM) structure, which consists of two regions: the absorption region (A) and the multiplication region (M). Therefore, investigating the materials used in these regions is crucial from various perspectives. Selecting materials with high ionization coefficients at elevated temperatures and electric fields in the multiplication region is important. In our studies, we found that, based on the coefficients from the Okuto-Crowell model, GaN exhibits exceptionally high ionization coefficients, approximately αe =8.5 × 106 and αh=7.5 × 106 at an electric field of 5 MV/m and temperature of 400 K. Additionally, at very low temperatures, around 250 K, materials such as 4H-SiC and AlGaN can exhibit impact or avalanche ionization properties due to their crystal lattice structure. In contrast, GaN and Ga2O3 do not demonstrate avalanche conditions at this temperature. Finally, our analysis's results are almost consistent with some of the experimental results presented in [20]. However, a slight difference is related to the determination of the input parameters of the Okuto-Crowell equation.
لیست مقالات
لیست مقالات بایگانی شده
Human Action Recognition in Still Images Using ConViT
Seyed Rohollah Hosseyni - Sanaz Seyedin - Hassan Taheri
An event-triggered distributed consensus information filter for target tracking in sensor networks
Sara Giyani - Behrouz Safarinejadian - Sajad Shamsi
Entanglement Witness Derived By Using Kolmogorov-Arnold Networks
Fatemeh Lajevardi - Azam Mani - Ali Fahim
Chemical Stability and Electronic Properties of Silicon Doped Carbon Nanotubes: A First Pricniples Study
Maryam Hakimi - Ebrahim Nadimi
One-Way Edge Modes Induced by Synthetic Magnetic Field in Time-Varying LC Circuit
Sadeq Bahmani - Amir Nader Askarpour
Holographic Principle Inspired Metal-Only Spoof Surface Plasmon Polariton Leaky-wave Antenna with Circular Polarization
Sajjad Zohrevand - Mohammad Amin Chaychi zadeh - Nader Komjani
Enhanced Optimal Droop Control for Effective Load Sharing in an Islanded Microgrid
Rafi Zahedi - Hassan Rastegar
Design and Simulation of a Novel High Sensitive MEMS Microphone Based On a Spring-Supported Circular Diaphragm
Mehdi Pazhooh - Ebrahim Abbaspour-Sani
An Improved Nonlinear Observer-Based Integrated Guidance and Control for Hypersonic Flight Vehicle with Angle Constraints
Seyedeh Mahsa Zakipour Bahambari - Saeed Khankalantary
شناسایی کمپلکس های پروتئینی با رویکرد خوشه بندی EM و با استفاده از داده های زیستی
مریم مولی وردیخانی - سعید جلیلی
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 40.4.2