کنفرانس مهندسی برق ایران

صفحه اصلی / سی امین کنفرانس بین المللی مهندسی برق

Design of a Full Swing 20-Transistors Full Adder Cell based on CNTFET with High Speed and Low PDP

نویسندگان :

Amir Baghi Rahin¹ Afshin Kadivarian² Vahid Baghi Rahin³

1- دانشگاه آزاد اسلامی واحد سردرود 2- دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران 3- دانشگاه آزاد اسلامی واحد سردرود

کلمات کلیدی :

Full adder (FA)،Full swing،Carbon nanotube field effect transistor (CNTFET)،High speed،Power-delay product (PDP

چکیده :

One of the most important elements in digital electronics is the full adder, which has made uninterrupted improvements to its structure in terms of speed, operating voltage, power consumption and chip area. In this paper, we present a low-power full adder cell utilizing the benefits of CNTFET, the main purpose of which is to provide high speed and low power consumption with full voltage swing. This new design works successfully at low voltages with the ability to drive properly. A comparison between this new circuit and modern full adder cells shows the improvement in terms of delay and power-delay product (PDP). The proposed design can work well at a supply voltage of 0.5 V with a delay of 33.971 ps, an average power consumption of 0.476 μW and a PDP of 16.19 aJ.

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