کنفرانس مهندسی برق ایران

صفحه اصلی / سی و چهارمین کنفرانس بین المللی مهندسی برق

Parallel Multiprocessing PIC Simulation of Reactive Ion Etching in OFET with Polymer Semiconductor

نویسندگان :

Hadi Barati¹ Mohammad Mohsen Ebrahimi Seyghalan² Armita Barati³ Arian Mousavi Madani⁴ Mehdi Fardmanesh⁵

1- دانشگاه صنعتی شریف 2- دانشگاه صنعتی شریف 3- دانشگاه صنعتی امیرکبیر 4- دانشگاه صنعتی شریف 5- دانشگاه صنعتی شریف

کلمات کلیدی :

plasma reactive ion etching،Particle-in-Cell،parallel programming،polymer semiconductor

چکیده :

In plasma reactive ion etching (RIE), ion energy and flux are critical in determining etching effectiveness, ranging from surface modification to structural damage. This study employs parallel Particle-in-Cell (PIC) simulations of oxygen plasma to analyze ion beam properties on a polymer semiconductor surface across pressures of 100, 150, and 200 mTorr. Results reveal a non-monotonic trend in mean ion flux, peaking at 1.1605×10¹⁶ m⁻² s⁻¹ at 150 mTorr, suggesting an optimal pressure balance between ion generation and collisional losses. Mean ion beam energy increased with pressure (23.2 to 47 eV), while ion incidence remained near-normal, ensuring high collimation and efficient energy transfer. These findings highlight 150 mTorr as the optimal pressure for maximizing ion flux and etching extent in oxygen-based RIE processes.