کنفرانس مهندسی برق ایران

صفحه اصلی / سی و دومین کنفرانس بین المللی مهندسی برق

PCSA-TMRAM: Precharge Sense Amplifier-Based Ternary MRAM

نویسندگان :

Mohammad Mahdi Mazaheri¹ Motahareh BahmanAbadi² Mohammad Hossein Moaiyeri³

1- دانشگاه شهید بهشتی 2- دانشگاه شهید بهشتی 3- دانشگاه شهید بهشتی

کلمات کلیدی :

Ternary Logic،Spintronic،MRAM،Nonvolatility

چکیده :

Multi-valued logic is currently receiving much attention and has gained great importance. This paper discusses a novel approach to creating energy-efficient memory systems with high storage capacity using advanced multi-level logic. Due to increased power usage in existing ternary memory systems, the paper introduces a new ternary MRAM design. This design combines the energy-saving benefits of PCSA-based memory with the durable data retention of magnetic tunnel junctions, enhancing its application to ternary data processing. Using the 7nm FinFET technology for crafting digital circuits, the design significantly reduces energy consumption during reading and writing operations by up to 84% and 8%, respectively, compared to current ternary nonvolatile memories.

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