کنفرانس مهندسی برق ایران

صفحه اصلی / سی و دومین کنفرانس بین المللی مهندسی برق

Inversion Coefficient as a Key Design Parameter in MOS Device Performance

نویسندگان :

Gholamreza Khademevatan¹ Ali Jalali²

1- Shahid Beheshti University 2- Shahid Beheshti University

کلمات کلیدی :

inversion coefficient،metal oxide semiconductor،Enz Krummenacher Vittoz،complementary metal oxide semiconductor

چکیده :

The paper discusses MOS device performance using the EKV model and its key parameter, the inversion coefficient (IC), for the 90nm CMOS process. The study includes sizing relationships, DC bias parameters, small signal parameters, gain and bandwidth relationships, gate referred thermal and flicker noise parameters, local area DC mismatch parameters, gate-source leakage current and figure of merit factors for low power RF designs. By using charts versus IC, the graphical view illustrates MOS performance tradeoffs. By introducing the MOSFET operating .plane, optimal bias points for the best MOS performance can be selected. It is observed that the moderate inversion region is the most suitable for low-power design

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