کنفرانس مهندسی برق ایران

صفحه اصلی / سی و یکمین کنفرانس بین المللی مهندسی برق

Simulation of planar organic-inorganic perovskite light-emitting diode

نویسندگان :

Morteza Yarahmadi¹ Elnaz Yazdani² Mohammad Kazem Moravvej-Farshi³

1- دانشگاه تربیت مدرس تهران 2- دانشگاه تربیت مدرس تهران 3- دانشگاه تربیت مدرس تهران

کلمات کلیدی :

perovskite،(light emitting diode (LED،internal quantum efficiency (IQE)،(external quantum efficiency (EQE،light extraction efficiency (LEE)

چکیده :

we have designed and simulated a planar light emitting diode (LED) based on organic-inorganic CH3NH3PbBr3 perovskite material at 530 nm wavelength. Numerical results show the device internal quantum efficiency (IQE) is remarkably depends on perovskite layer thickness. As the thickness increases from 20 to 100 nm, IQE becomes almost twice greater. The study of the changes in the thickness of the active area of the diode indicates that the only both portion of external quantum efficiency (EQE) i.e., IQE and light extraction efficiency (LEE) affected by the parameter. Before dealing with complex solutions of the efficiency optimization, it is possible to significantly increase the LED performance by determining the optimal value of the emitter layer thickness.