کنفرانس مهندسی برق ایران

صفحه اصلی / سی امین کنفرانس بین المللی مهندسی برق

Efficiency Enhancement of Heterojunction IBC Solar Cell: Surface Passivation

نویسندگان :

Amirmohammad Shahryari¹ Zohreh Golshan bafghi² Negin Manavizadeh³

1- دانشگاه صنعتی خواجه نصیرالدین طوسی 2- دانشگاه صنعتی خواجه نصیرالدین طوسی 3- دانشگاه صنعتی خواجه نصیرالدین طوسی

کلمات کلیدی :

Silicon solar cell،interdigitated back contact،passivation layer،III-As compound،high-efficiency.

چکیده :

In this paper, the performance of heterojunction interdigitated back contact solar cell with passivation layer is studied. Moreover, the impact of the passivation layer on preventing from recombining photogenerated carriers is investigated as well. According to the simulation results, the VOC and ISC of the proposed solar cell are 0.619 V and0.447nA, respectively. This solar cell has 20.8% efficiency and 74.62 fill factor as the most important parameters for solar cells. The results show the combination of IBC silicon solar cell with III-As compound semiconductor cells and a surface passivation layer has a significant enhancement in solar cell performance and it is a unique structure for high-efficiency solar cell.