کنفرانس مهندسی برق ایران

صفحه اصلی / سی و چهارمین کنفرانس بین المللی مهندسی برق

Investigation of Impact Ionization Models in GaN-based Multiplication Region Toward UV SAM-SPAD Design

نویسندگان :

Mohammad Hossein Khoddami¹ Hassan Kaatuzian² Ahmad Reza Amin³

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر 3- دانشگاه جامع امام حسین (ع)

کلمات کلیدی :

Impact Ionization Coefficients،SAM-APD،Okuto-Crowell،UltraViolet،Selberherr،GaN

چکیده :

Accurate modeling of impact ionization coefficients is a critical requirement for the design and optimization of avalanche photodiodes (APDs) and ultraviolet single-photon detectors. In this work, hole impact ionization coefficients in GaN-based structures from the laboratory results presented in the references extracted and systematically analyzed using two widely adopted analytical models, namely the standard Okuto-Crowell and Selberherr models. The ionization data are obtained from experimentally reported gain characteristics and by solving the corresponding equations. Model parameters are extracted through an iterative fitting procedure by minimizing the mean squared error in the logarithmic domain. The fitting accuracy of each model is quantitatively evaluated using a defined error metric. The results demonstrate that while the Okuto–Crowell model provides a simple and physically intuitive description, its limited parameter set restricts fitting accuracy. In contrast, the Selberherr model exhibits significantly improved agreement with experimental data, achieving a 33.66% enhancement in fitting performance. This improvement is firstly due to the increased number of fitting parameters, which provides greater flexibility for capturing the complex behavior of hole impact ionization under high electric fields. The extracted parameters and comparative analysis provide valuable insights for accurate ionization modeling and can serve as a reliable result for the design of high-performance GaN-based APDs and deep-ultraviolet single-photon detection systems.