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سی و چهارمین کنفرانس بین المللی مهندسی برق
Effect of Source Pocket on the Performance of the Zigzag Antimonene Nanoribbon TFETs: A First-Principles Investigation
نویسندگان :
Amirreza Ghazi
1
Arash Yazdanpanah Goharrizi
2
1- Shahid Beheshti University
2- Shahid Beheshti University
کلمات کلیدی :
antimonene،zigzag nanoribbon،source pocket،DFT،TFET
چکیده :
In this paper, the impact of the source-pocket (SP) technique on the performance of a tunneling field-effect transistor (TFET) based on low-dimensional materials is investigated using density functional theory (DFT), with a zigzag antimonene nanoribbon employed as the channel material. By optimizing the length and doping concentration of the SP region, specifically through the introduction of a 3 nm SP with a doping level of 0.008 electrons per atom, an approximately 10-fold enhancement in the on-state current is achieved without degrading the off-state current. Furthermore, the subthreshold swing is reduced from 62 to 55 mV/decade.
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بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 44.7.2
