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بیست و نهمین کنفرانس مهندسی برق ایران
Effect of the Number of Quantum-Dot Layers on the Performance of the 1.3 µm InAs/GaAs VCSELs
نویسندگان :
Sara Alaei
1
Mahmood Seifouri
2
Saeed Olyaee
3
Gholamreza Babaabbasi
4
1- دانشگاه تربیت دبیر شهید رجایی
2- دانشگاه تربیت دبیر شهید رجایی
3- دانشگاه تربیت دبیر شهید رجایی
4- دانشگاه آزاد اسلامی واحد خرمآباد
کلمات کلیدی :
Vertical-cavity surface-emitting lasers (VCSELs), self-heating, 3-dB modulation bandwidth, quantum-dot
چکیده :
In this paper, we investigate the effect of the number of quantum-dot (QD) layers on the performance of the 1.3um QD-vertical-cavity surface-emitting lasers (QD-VCSELs). QD rate equations and thermal conduction equation is solved self-consistently to consider the effect of self-heating on the characteristics of the QD-VCSEL. Results demonstrate that a further increase in the number of QD layers leads to a decrease in self-heating of the laser which enhances the maximum achievable output power and 3-dB modulation bandwidth of the laser. It is also shown that with an increase in the number of QD layers, the roll-over of the optical power occurs at higher injection currents which leads to improve in the dynamic and static behavior of the laser.
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بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 44.7.2
