کنفرانس مهندسی برق ایران

صفحه اصلی / بیست و نهمین کنفرانس مهندسی برق ایران

Effect of the Number of Quantum-Dot Layers on the Performance of the 1.3 µm InAs/GaAs VCSELs

نویسندگان :

Sara Alaei¹ Mahmood Seifouri² Saeed Olyaee³ Gholamreza Babaabbasi⁴

1- دانشگاه تربیت دبیر شهید رجایی 2- دانشگاه تربیت دبیر شهید رجایی 3- دانشگاه تربیت دبیر شهید رجایی 4- دانشگاه آزاد اسلامی واحد خرم‌آباد

کلمات کلیدی :

Vertical-cavity surface-emitting lasers (VCSELs), self-heating, 3-dB modulation bandwidth, quantum-dot

چکیده :

In this paper, we investigate the effect of the number of quantum-dot (QD) layers on the performance of the 1.3um QD-vertical-cavity surface-emitting lasers (QD-VCSELs). QD rate equations and thermal conduction equation is solved self-consistently to consider the effect of self-heating on the characteristics of the QD-VCSEL. Results demonstrate that a further increase in the number of QD layers leads to a decrease in self-heating of the laser which enhances the maximum achievable output power and 3-dB modulation bandwidth of the laser. It is also shown that with an increase in the number of QD layers, the roll-over of the optical power occurs at higher injection currents which leads to improve in the dynamic and static behavior of the laser.