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بیست و نهمین کنفرانس مهندسی برق ایران
Low-Leakage 6T SRAM Cell for In-Memory Computing with High Stability
نویسندگان :
Deniz Najafi
1
Behzad Ebrahimi
2
1- دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران
2- دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران
کلمات کلیدی :
In-Memory-computing, IGFinFET, polymorphic, low-leakage, SRAM.
چکیده :
In this paper, a novel low-leakage six transistor static random access memory (SRAM) is proposed in IGFinFET technology. This cell is a great candidate for “In-memory-computing” because of the minimum transistor count and decoupled read and write operations. According to simulations in 10 nm FinFET technology, the RSNM, and WM of the proposed cell is 2x and 1.7x higher than conventional 6T cells at 500 mV supply voltage. This results in enabling the ability to decrease the supply voltage of the memory array, without risking the stability, to save power. Besides, to further improve in-memory computing, a new polymorphic logic gate with eight transistors has been proposed. Using the proposed polymorphic gate decreases the latency of in-memory computation and enables the in-memory vector to compute with low overhead.
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بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 44.7.2
