کنفرانس مهندسی برق ایران

صفحه اصلی / بیست و نهمین کنفرانس مهندسی برق ایران

Low-Leakage 6T SRAM Cell for In-Memory Computing with High Stability

نویسندگان :

Deniz Najafi¹ Behzad Ebrahimi²

1- دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران 2- دانشگاه آزاد اسلامی واحد علوم و تحقیقات تهران

کلمات کلیدی :

In-Memory-computing, IGFinFET, polymorphic, low-leakage, SRAM.

چکیده :

In this paper, a novel low-leakage six transistor static random access memory (SRAM) is proposed in IGFinFET technology. This cell is a great candidate for “In-memory-computing” because of the minimum transistor count and decoupled read and write operations. According to simulations in 10 nm FinFET technology, the RSNM, and WM of the proposed cell is 2x and 1.7x higher than conventional 6T cells at 500 mV supply voltage. This results in enabling the ability to decrease the supply voltage of the memory array, without risking the stability, to save power. Besides, to further improve in-memory computing, a new polymorphic logic gate with eight transistors has been proposed. Using the proposed polymorphic gate decreases the latency of in-memory computation and enables the in-memory vector to compute with low overhead.

لیست مقالات

لیست مقالات بایگانی شده

Non-homogeneous interference suppression in OFDM array radars using direct data domain approach

Sima Shariatmadari

تحلیل ارتباطات موثر و عملکردی سیگنال‌های فیزیولوژیکی راننده جهت بهبود تشخیص حواس پرتی

نیلوفر وثوق - زهرا بهمنی دهکردی - امین محمدیان

Multiphysics Analysis of HTS Transformer utilizing Stainless Steel Stabilizer on Short Circuit Condition

Ashkan Mirzaei Rajeooni - Hossein Heydari - Mohammad Khakroei - Mahdi Rahimi Pirbasti

Diagnosis of Covid 19 disease, flu, allergies, colds

Mahyar Mohammady - Marzieh Kamali

بهبود بازدهی انرژی در سیستم های بدون سلول با آنتن های انبوه مبتنی بر مخابرات پهپادها به کمک انتقال همزمان توان و اطلاعات به صورت بی سیم

امیرحسین زحمتی - محسن اسلامی

Joint Fairness, Fragmentation, and Physical Layer Impairments Aware Routing, Spectrum and Modulation Level Allocation in Elastic Optical Networks

Hassan Khanahmadzadeh - Arash Rezaee - Lotfollah Beygi

Stability Analysis of Distributed-Order Systems: a Lyapunov Scheme

Vahid Badri

Nonvolatile Quaternary Pre-Charged MRAM Cell Design based on Emerging Technologies

Motahareh BahmanAbadi - Abdolah Amirany - Mohammad Hossein Moaiyeri

Plasmonic Refractive Index Sensor Using a Metal-Insulator-Metal Waveguide with a Disk-shaped Cavity and Silver Nanorod Defects

Mohammad Ghanavati - Mohammad-Azim Karami

Design and Implementation of a TEM Double-ridge Horn Antenna for Ultra-Wideband Applications

Seyed Navid Seyfossadat - Hassan Zakeri - Ahad Tavakoli - Gholamreza Moradi

ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 40.4.2